发明名称 |
Memory device page buffer configuration and methods |
摘要 |
Memory devices and methods are described that include communication circuitry between page buffers in a memory array. Examples include communication circuitry that provide status information of page buffers that are directly adjacent to a given page buffer. The exchanged information can be used to adjust a given page buffer to compensate for effects in directly adjacent data lines that are being operated at the same time. |
申请公布号 |
US8773921(B2) |
申请公布日期 |
2014.07.08 |
申请号 |
US201213572854 |
申请日期 |
2012.08.13 |
申请人 |
Micron Technology, Inc. |
发明人 |
Ruby Paul D.;Moschiano Violante |
分类号 |
G11C7/10 |
主分类号 |
G11C7/10 |
代理机构 |
Schwegman, Lundberg & Woessner, P.A. |
代理人 |
Schwegman, Lundberg & Woessner, P.A. |
主权项 |
1. An apparatus, comprising:
a first data line associated with a first plurality of memory cells; a second data line directly adjacent to the first data line and coupled to a second plurality of memory cells; a first page buffer operable to control an activity of the first data line; a second page buffer operable to control an activity of the second data line; communication circuitry coupled between the first and second page buffers and operable to pass information about a voltage associated with the second data line to the first page buffer; and further including circuitry to raise a voltage on the first data line in response to the information about the voltage associated with the second data line. |
地址 |
Boise ID US |