发明名称 Memory device page buffer configuration and methods
摘要 Memory devices and methods are described that include communication circuitry between page buffers in a memory array. Examples include communication circuitry that provide status information of page buffers that are directly adjacent to a given page buffer. The exchanged information can be used to adjust a given page buffer to compensate for effects in directly adjacent data lines that are being operated at the same time.
申请公布号 US8773921(B2) 申请公布日期 2014.07.08
申请号 US201213572854 申请日期 2012.08.13
申请人 Micron Technology, Inc. 发明人 Ruby Paul D.;Moschiano Violante
分类号 G11C7/10 主分类号 G11C7/10
代理机构 Schwegman, Lundberg & Woessner, P.A. 代理人 Schwegman, Lundberg & Woessner, P.A.
主权项 1. An apparatus, comprising: a first data line associated with a first plurality of memory cells; a second data line directly adjacent to the first data line and coupled to a second plurality of memory cells; a first page buffer operable to control an activity of the first data line; a second page buffer operable to control an activity of the second data line; communication circuitry coupled between the first and second page buffers and operable to pass information about a voltage associated with the second data line to the first page buffer; and further including circuitry to raise a voltage on the first data line in response to the information about the voltage associated with the second data line.
地址 Boise ID US