| 摘要 |
The present invention relates to a method and an apparatus for depositing a thin film at a high speed. The method for depositing a thin film at a high speed according to the present invention comprises the steps of: supplying a process gas to a process chamber on which a substrate is mounted; spraying the process gas on the substrate and applying a high frequency VHF power to a shower head which functions as a first electrode; and heating the substrate mounted on a susceptor on which the substrate is mounted and functions as a second electrode. The high frequency VHF power is a frequency in a range of 27.12 to 53 MHz. The susceptor includes a metal heater. According to the present invention, it is possible to improving a deposition speed by 1.5 to 2 times compared to the prior art by using the high frequency VHF power in the range of 27.12 to 53 MHz higher than 13. 56 MHz of the prior art as a power source for plasma discharge, and to easily resolve a problem of ground which may cause a trouble upon using the high frequency VHF power higher than the prior art by using the meal heater. Even in the case of forming a multi-layered thin film, it is possible not only to improve the deposition speed and but also to shorten a deposition processing time since energy of ions incoming into the susceptor is low and an increase in a temperature of the susceptor is small to remove a need to suspend a process in order to maintain a low temperature like the prior art because the high frequency VHF power in the range of 27.12 to 53 MHz is used even when the deposition processing time is lengthened, thereby achieving an excellent low-temperature precision process. |
