发明名称 GENERATING A HIGHLY IONIZED PLASMA IN A PLASA CHAMBER
摘要 A method of generating a highly ionized plasma in a plasma chamber (2), comprises the steps of: a. providing a neutral gas to be ionized in the plasma chamber (2) at pressure below 50 Pa; b. supplying at least one high energy high power electrical pulse with power equal or larger than 100 kW and energy equal or larger than 10 J, to at least one magnetron cathode in connection with a target in the plasma chamber (2) c. producing a highly ionized plasma from the neutral gas in a plasma volume such that the plasma volume cross section increases during a current rise period, d. sputtering atoms from the target with the highly ionized plasma, e. ionizing at least part of the sputtered atoms.
申请公布号 KR20140086928(A) 申请公布日期 2014.07.08
申请号 KR20137035034 申请日期 2012.06.26
申请人 TRUMPF HUETTINGER SP. Z O. O. 发明人 KLIMCZAK ANDRZEJ;OZIMEK PAWEL;BUGYI RAFAL
分类号 H01J37/34;C23C14/34 主分类号 H01J37/34
代理机构 代理人
主权项
地址