Optical proximity correction for active region design layout

摘要

The present disclosure provides an integrated circuit design method. In an example, a method includes receiving an integrated circuit design layout that includes an active region feature, a contact feature, and an isolation feature, wherein a portion of the active region feature is disposed between the contact feature and the isolation feature; determining whether a thickness of the portion of the active region feature disposed between the contact feature and the isolation feature is less than a threshold value; and modifying the integrated circuit design layout if the thickness is less than the threshold value, wherein the modifying includes adding a supplementary active region feature adjacent to the portion of the active region feature disposed between the contact feature and the isolation feature.

主权项

1. A method comprising:
receiving an integrated circuit design layout that includes an active region feature, a contact feature, and an isolation feature, wherein a portion of the active region feature is disposed between the contact feature and the isolation feature; determining whether a thickness of the portion of the active region feature disposed between the contact feature and the isolation feature is less than a threshold value; modifying the integrated circuit design layout if the thickness is less than the threshold value, wherein the modifying includes adding a supplementary active region feature adjacent to the portion of the active region feature disposed between the contact feature and the isolation feature during an optical proximity correction (OPC) process; and fabricating a mask according to the integrated circuit design layout.