发明名称 Low sloped edge ring for plasma processing chamber
摘要 Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees.
申请公布号 US8771423(B2) 申请公布日期 2014.07.08
申请号 US201213649196 申请日期 2012.10.11
申请人 Applied Materials, Inc. 发明人 Lee Changhun;Willwerth Michael D.;Nguyen Hoan
分类号 C23C16/50;C23C16/00;C23F1/00;H01L21/306 主分类号 C23C16/50
代理机构 Patterson & Sheridan, LLP 代理人 Patterson & Sheridan, LLP
主权项 1. A cover ring for use in a plasma processing chamber, comprising of: a ring-shaped body fabricated from a yttrium (Y) containing material, the body comprising of: a bottom surface having an inner locating ring and an outer locating ring, the inner locating ring extending further from the body than the outer locating ring, the inner locating ring having an inner wall, the inner wall facing a centerline of the ring-shaped body, wherein the outer locating ring has an outer wall defining an outer diameter of the cover ring, the outer wall of the outer locating ring is configured to cover an outer most diameter of a substrate support, the bottom of the outer locating ring extends below the bottom of the body but less than the bottom of the inner locating ring; a notch defined in the bottom surface between the inner locating ring and the outer locating ring; an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land, the secondary wall having a diameter greater than the main wall less than the inner wall of the inner locating ring, and wherein the main wall is above the notch; and a top surface having a substantially horizontal main top surface, and wherein the inner wall of the inner locating ring is radially inward of the main top surface, the outer locating ring is radially outward of the main top surface, a substantially horizontal inner top surface and the substantially horizontal land, the main top surface positioned outward of and above the inner top surface, the inner top surface positioned outward of and above the land, and wherein the secondary wall and the substantially horizontal land define a substrate-receiving pocket, and the inner and outer locating ring are radially outward of the substrate receiving step.
地址 Santa Clara CA US