| 摘要 |
The present technique provides a semiconductor device which increases the contact area between a metal contact plug and an active region and a method for fabricating the same. A method for fabricating a semiconductor device according to the present technique includes a step of forming a recess by etching a substrate; a step of forming a first metal containing layer and a second metal containing layer on a front surface including the recess; a step of forming metal silicide by making the first metal containing layer to react with the surface of the recess; a step of forming a seed layer in the recess by separating the first metal containing layer and the second metal containing layer; a step of selectively growing a metal pad on the seed layer; and a step of forming a metal contact plug on the metal pad. |
