Technique for forming a dielectric interlayer above a structure including closely spaced lines

摘要

By depositing the lower portion of a silicon dioxide interlayer dielectric by means of SACVD or HDP-CVD techniques, the generation of voids may be reliably avoided even for devices having spaces between closely spaced lines on the order of 200 nm or less. Moreover, the bulk silicon dioxide material is deposited by well-established plasma enhanced CVD techniques, thereby providing the potential for using well-established process recipes for the subsequent CMP process, so that production yield and cost of ownership may be maintained at a low level.

主权项

1. A method, comprising:
forming a first layer comprising a first dielectric material over a structure having lines and spaces, said first dielectric layer conformally covering said structure and said spaces having a first aspect ratio prior to forming said first dielectric layer; without forming or depositing an interposing spacer, layer, or partial layer therebetween, forming a second layer comprising a second dielectric material on the entirety of said first dielectric layer, said second layer partially filling said spaces, said partial filling of said spaces resulting in said spaces having a second aspect ratio less than said first aspect ratio; and forming a third layer comprising said second dielectric material above said second layer by a plasma enhanced chemical vapor deposition technique to enclose said structure.