Spacer process for on pitch contacts and related structures

摘要

Methods are disclosed, including for increasing the density of isolated features in an integrated circuit. Also disclosed are associated structures. In some embodiments, contacts are formed on pitch with other structures, such as conductive interconnects that may be formed by pitch multiplication. To form the contacts, in some embodiments, a pattern corresponding to some of the contacts is formed in a selectively definable material such as photoresist. Features in the selectively definable material are trimmed, and spacer material is blanket deposited over the features and the deposited material is then etched to leave spacers on sides of the features. The selectively definable material is removed, leaving a mask defined by the spacer material. The pattern defined by the spacer material may be transferred to a substrate, to form on pitch contacts. In some embodiments, the on pitch contacts may be used to electrically contact conductive interconnects in the substrate.

主权项

1. A method for semiconductor processing, comprising:
providing a substrate; providing a layer of selectively definable material over the substrate; patterning the layer of selectively definable material to form a row of pillars and a block each formed of the selectively definable material, the block extending along a side of and contacting each of the pillars of the row of pillars, as seen in a top down view, the pillars having a linear density Z; and replacing the row of pillars with a row of holes formed in a masking layer disposed on the level formerly occupied by the pillars, at least some of the holes disposed at locations formerly occupied by at least some of the pillars, the holes having a linear density greater than Z.