发明名称 Manufacturing techniques for workpieces with varying topographies
摘要 Some embodiments relate to a method for processing a workpiece. In the method, an anti-reflective coating layer is provided over the workpiece. A first patterned photoresist layer, which has a first photoresist tone, is provided over the anti-reflective coating layer. A second patterned photoresist layer, which has a second photoresist tone opposite the first photoresist tone, is provided over the first patterned photoresist layer. An opening extends through the first and second patterned photoresist layers to allow a treatment to be applied to the workpiece through the opening. Other embodiments are also disclosed.
申请公布号 US8771534(B2) 申请公布日期 2014.07.08
申请号 US201213350010 申请日期 2012.01.13
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Chen Chun-Chang;Fu Shih-Chi;Mo Wang-Pen;Hsieh Hung-Chang
分类号 B44C1/22 主分类号 B44C1/22
代理机构 Eschweiler & Associates, LLC 代理人 Eschweiler & Associates, LLC
主权项 1. A method for processing a workpiece having a higher topography region and a lower topography region, the method comprising: providing an anti-reflective coating layer over the workpiece; providing a first patterned photoresist layer having a first photoresist tone over the anti-reflective coating layer; providing an un-patterned second photoresist layer over the first patterned photoresist layer; and patterning the un-patterned second photoresist layer after the second photoresist layer has been provided over the first patterned photoresist layer, wherein the second photoresist layer has a second photoresist tone opposite the first photoresist tone and wherein an opening extending through the first and second patterned photoresist layers allows a treatment to be applied to the workpiece through the opening.
地址 Hsin-chu TW