发明名称 |
Manufacturing techniques for workpieces with varying topographies |
摘要 |
Some embodiments relate to a method for processing a workpiece. In the method, an anti-reflective coating layer is provided over the workpiece. A first patterned photoresist layer, which has a first photoresist tone, is provided over the anti-reflective coating layer. A second patterned photoresist layer, which has a second photoresist tone opposite the first photoresist tone, is provided over the first patterned photoresist layer. An opening extends through the first and second patterned photoresist layers to allow a treatment to be applied to the workpiece through the opening. Other embodiments are also disclosed. |
申请公布号 |
US8771534(B2) |
申请公布日期 |
2014.07.08 |
申请号 |
US201213350010 |
申请日期 |
2012.01.13 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Chen Chun-Chang;Fu Shih-Chi;Mo Wang-Pen;Hsieh Hung-Chang |
分类号 |
B44C1/22 |
主分类号 |
B44C1/22 |
代理机构 |
Eschweiler & Associates, LLC |
代理人 |
Eschweiler & Associates, LLC |
主权项 |
1. A method for processing a workpiece having a higher topography region and a lower topography region, the method comprising:
providing an anti-reflective coating layer over the workpiece; providing a first patterned photoresist layer having a first photoresist tone over the anti-reflective coating layer; providing an un-patterned second photoresist layer over the first patterned photoresist layer; and patterning the un-patterned second photoresist layer after the second photoresist layer has been provided over the first patterned photoresist layer, wherein the second photoresist layer has a second photoresist tone opposite the first photoresist tone and wherein an opening extending through the first and second patterned photoresist layers allows a treatment to be applied to the workpiece through the opening. |
地址 |
Hsin-chu TW |