发明名称 |
Method of producing substrate for liquid ejection head |
摘要 |
A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide. |
申请公布号 |
US8771531(B2) |
申请公布日期 |
2014.07.08 |
申请号 |
US201213433806 |
申请日期 |
2012.03.29 |
申请人 |
Canon Kabushiki Kaisha |
发明人 |
Furusawa Kenta;Koyama Shuji;Abo Hiroyuki;Yonemoto Taichi |
分类号 |
B41J2/16 |
主分类号 |
B41J2/16 |
代理机构 |
Fitzpatrick, Cella, Harper & Scinto |
代理人 |
Fitzpatrick, Cella, Harper & Scinto |
主权项 |
1. A method of producing a substrate for a liquid ejection head including a liquid supply port formed therein, comprising:
forming a sacrifice layer on a first surface of a silicon substrate in a region in which the liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by use of the etching mask as a mask and by use of a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by use of a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide. |
地址 |
Tokyo JP |