发明名称 Method of producing substrate for liquid ejection head
摘要 A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.
申请公布号 US8771531(B2) 申请公布日期 2014.07.08
申请号 US201213433806 申请日期 2012.03.29
申请人 Canon Kabushiki Kaisha 发明人 Furusawa Kenta;Koyama Shuji;Abo Hiroyuki;Yonemoto Taichi
分类号 B41J2/16 主分类号 B41J2/16
代理机构 Fitzpatrick, Cella, Harper & Scinto 代理人 Fitzpatrick, Cella, Harper & Scinto
主权项 1. A method of producing a substrate for a liquid ejection head including a liquid supply port formed therein, comprising: forming a sacrifice layer on a first surface of a silicon substrate in a region in which the liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by use of the etching mask as a mask and by use of a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by use of a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.
地址 Tokyo JP