| 摘要 |
This invention is a novel methodology for precision metrology, sensing, and actuation at the micro- and nano-scale. It is well-suited for micro- and nano-scale because it leverages off the electromechanical benefits of the scale. The invention makes use of electrical measurands of micro- or nano-scale devices to measure and characterize themselves, other devices, and whatever the devices subsequently interact with. By electronically measuring the change in capacitance, change in voltage, and/or resonance frequency of one or more test structures, a multitude of geometric, dynamic, and material properties may be extracted with a much higher accuracy and precision than conventional methods. |
| 主权项 |
1. A method of using electrical measurands to analyze and characterize mechanical properties of micro- and nano-scale electromechanical systems, wherein electrical measurands include capacitance, voltage, or current, wherein the mechanical properties include geometric, dynamic, or material properties, wherein the geometric properties include in-plane and out-of-plane dimensions of a fabricated structure, wherein dynamic properties include displacement, velocity, acceleration, mass, damping, stiffness, force, pressure, or temperature, wherein material properties include Young's modulus, stress, strain, density, Poisson's ratio, viscosity, thermo-elasticity, or thermal-conductivity, wherein electrical measurands are used to extract mechanical properties of one or more micro/nano electromechanical systems, comprising the steps of:
a. means of determining the architecture of one or more test structures having an architecture emulating said given architectural properties and exhibiting a predetermined layout; b. means of co-producing said micro/nano electromechanical structure with said test structures as a unitary device; c. means of measuring the geometric, dynamic and material properties of the micro/nano electromechanical system by correlating said predetermined layout and performance to electrical-based sensing and actuation to determine said properties and associated errors; d. means of calculating one or more changes in capacitances of one or more micro/nano electromechanical systems i due to deflection including obtaining geometry overcut as function of changes in capacitances; e. means of using overcut and layout geometry to calculate geometry comprising widths, gaps, lengths, areas, and volumes as functions of changes in capacitances; f. means of calculating compliances Kbase and Kweb as functions of changes in capacitances; g. means of calculating sidewall angle θ as a function of changes in capacitances; h. means of calculating layer thickness h as a function of changes in capacitances and torsional resonance; i. means of calculating one or more displacement-stop potentials and corresponding changes in capacitances of said test structure; j. means of calculating a sensed or applied comb-drive force F as a function of changes in capacitances and applied voltages;/ k. means of calculating displacement as a function of changes in capacitances and applied voltages; l. means of calculating system stiffness as a function of changes in capacitances and applied voltages; m. means of calculating beam stiffness as a function of changes in capacitances and applied voltages; n. means of calculating material Young's modulus E as a function of changes in capacitances and applied voltages; o. means of calculating Poisson's ratio as a function of changes in capacitances and applied voltages; p. means of calculating shear modulus as a function of changes in capacitances and applied voltages; q. means of calculation damping factor as a function of displacement resonance and velocity resonance; r. means of calculating natural frequency as a function of displacement resonance and velocity resonance; s. means of calculating quality factor as a function of displacement and velocity resonances; t. means of calculating material density as a function of said electronic measurands changes in sensed capacitances, applied voltages, and resonance frequencies; u. means of calculating system mass as a function of said electronic measurands, changes in sensed capacitances, applied voltages, and resonance frequencies; v. means of calculating system elasticity as a function of changes in sensed capacitances, applied voltages, and resonance frequencies; w. means of calculating system damping as a function of changes in sensed capacitances, applied voltages, and resonance frequencies; x. means of measuring the change in capacitance of the stress-induced deflection; y. means of calculating strain as a function of changes in sensed capacitances; z. means of calculating stress as a function of changes in sensed capacitances; aa. means of calculating elongation comb offset as a function of changes in sensed capacitances; and bb. means of calculating displacement as a function of changes in sensed capacitances. |
