| 发明名称 | Stacked memory devices with micro channels and memory systems including the same | ||
| 摘要 | At least one example embodiment discloses a stacked memory device including a plurality of stacked memory chips, each of the memory chips including a memory array, a plurality of through silicon vias (TSVs) operatively connected to the plurality of stacked memory chips, micro channels configured to access the memory arrays and at least one circuit in each memory chip, the at least one circuit configured to vary a number of the micro channels accessing the memory array. | ||
| 申请公布号 | US8773939(B2) | 申请公布日期 | 2014.07.08 |
| 申请号 | US201213462338 | 申请日期 | 2012.05.02 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Oh Tae-Young;Park Kwang-il |
| 分类号 | G11C8/00 | 主分类号 | G11C8/00 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A stacked memory device comprising: a plurality of stacked memory chips, each of the memory chips including a memory array; a plurality of through silicon vias (TSVs) operatively connected to the plurality of stacked memory chips; micro channels configured to access the memory arrays; and at least one circuit in each memory chip, the at least one circuit configured to vary a number of the micro channels accessing the memory array. | ||
| 地址 | Gyeonggi-do KR | ||