| 发明名称 |
Semiconductor structure and process thereof |
| 摘要 |
A semiconductor structure is located in a recess of a substrate. The semiconductor structure includes a liner, a silicon rich layer and a filling material. The liner is located on the surface of the recess. The silicon rich layer is located on the liner. The filling material is located on the silicon rich layer and fills the recess. Furthermore, a semiconductor process forming said semiconductor structure is also provided. |
| 申请公布号 |
US8772904(B2) |
申请公布日期 |
2014.07.08 |
| 申请号 |
US201213517573 |
申请日期 |
2012.06.13 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Liu Chih-Chien;Chang Chia-Lung;Chen Jei-Ming;Lee Jui-Min;Lin Yuh-Min |
| 分类号 |
H01L21/762;H01L29/06 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A semiconductor structure located in a recess of a substrate, and the semiconductor structure comprising:
a liner located on the surface of the recess; a silicon rich layer located on the liner, wherein the silicon rich layer comprises an oxygen-containing silicon rich layer and the oxygen content of the oxygen-containing silicon rich layer has a gradient distribution; and a filling material located on the silicon rich layer and filling the recess. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
