| 摘要 |
A resistance-capacitance oscillation circuit comprises an amplifier and a phase shifting circuit. The phase shifting circuit comprises at least three resistance-capacitance circuit elements, which comprise a resistance and a capacitance. At least one of the resistance-capacitance circuit elements comprises a variable resistance and a variable capacitance. The variable resistance is formed of a first electrode, a second electrode, a part of a semiconductor film, a part of a ferroelectric film, and a fourth electrode. The variable capacitor is formed of the second electrode, a third electrode, a fifth electrode, another part of the ferroelectric film, another part of the semiconductor film, and a paraelectric film. |
| 主权项 |
1. A resistance-capacitance oscillation circuit, comprising:
an amplifier; and a phase shifting circuit, wherein the amplifier comprises an output terminal and an input terminal; the phase shifting circuit comprises at least three resistance-capacitance circuit elements, each resistance-capacitance circuit element comprises a resistance and a capacitor; the capacitors are electrically connected in series between the output terminal and the input terminal; at least one of the RC circuit elements is a variable RC circuit element composed of a variable resistance and a variable capacitor; the variable resistance-capacitance circuit element comprises a first electrode, a second electrode, a third electrode, a fourth electrode, and a fifth electrode, a ferroelectric film, a semiconductor film, and a paraelectric film, Z axis denotes a direction of the normal line of the ferroelectric film; X axis denotes a direction orthogonal to the Z axis; the ferroelectric film and the semiconductor film are stacked along the Z axis; the first electrode, the second electrode, and the paraelectric film are disposed on the obverse surface of the semiconductor film; the second electrode is interposed between the first electrode and the paraelectric film along the X axis; the fourth electrode and the fifth electrode are disposed on the reverse surface of the ferroelectric film; the fourth electrode is electrically insulated from the fifth electrode; the fourth electrode is interposed between the first electrode and the second electrode in a perspective view along the Z axis; the variable resistance is formed of the first electrode, the second electrode, a part of the ferroelectric film, a part of the semiconductor film, and the fourth electrode; another part of the ferroelectric film, another part of the semiconductor film, and the paraelectric film are interposed between the third electrode and the fifth electrode; the variable capacitor is formed of the second electrode, the third electrode, the fifth electrode, the another part of the ferroelectric film, the another part of the semiconductor film, and the paraelectric film. |
