Semiconductor device having reinforced low-k insulating film and its manufacture method

摘要

A semiconductor device manufacture method has the steps of:
(a) coating a low dielectric constant low-level insulating film above a semiconductor substrate formed with a plurality of semiconductor elements; (b) processing the low-level insulating film to increase a mechanical strength of the low-level insulating film; (c) coating a low dielectric constant high-level insulating film above the low-level insulating film; and (d) forming a buried wiring including a wiring pattern in the high-level insulating film and a via conductor in the low-level insulating film. The low-level insulating film and high-level insulating film are made from the same material. The process of increasing the mechanical strength includes an ultraviolet ray irradiation process or a hydrogen plasma applying process.

主权项

1. A semiconductor device manufacture method comprising the steps of:
(a) forming a first insulating film of first porous silicon oxide, having a mechanical strength of a first value above a semiconductor substrate using spin-coating; (b) processing said first insulating film to increase the mechanical strength of the first insulating film from the first value to a second value; (c) after the step (b), forming a second insulating film of second porous silicon oxide, having a mechanical strength of a third value lower than the second value above said first insulating film using spin-coating; and (d) forming a buried wiring including a wiring pattern in said second insulating film and a via conductor in said first insulating film.