| 发明名称 |
Implementing logic circuits with memristors |
| 摘要 |
Implementing logic with memristors may include circuitry with at least three memristors and a bias resistor in a logic cell. One of the at least three memristors is an output memristor within the logic cell and the other memristors of the at least three memristors are input memristors. Each of the at least three memristors and the bias resistor are electrically connected to voltage sources wherein each voltage applied to each of the at least three memristors and the bias resistor and resistance states of the at least three memristors determine a resistance state of the output memristor. |
| 申请公布号 |
US8773167(B2) |
申请公布日期 |
2014.07.08 |
| 申请号 |
US201213561978 |
申请日期 |
2012.07.30 |
| 申请人 |
Hewlett-Packard Development Company, L.P. |
发明人 |
Robinett Warren;Williams R. Stanley |
| 分类号 |
H03K19/00;G11C11/00 |
主分类号 |
H03K19/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device for implementing logic with memristors, comprising:
circuitry comprising at least three memristors and a bias resistor in a logic cell; one of said at least three memristors being an output memristor within said logic cell and other memristors of said at least three memristors are input memristors; and each of said at least three memristors and said bias resistor are electrically connected to voltage sources, wherein each voltage applied to each of said at least three memristors and said bias resistor and resistance states of said at least three memristors determine a resistance state of said output memristor. |
| 地址 |
Houston TX US |
