Method of manufacturing integrated circuit devices

摘要

A method for manufacturing integrated circuit devices. In one aspect, the invention may be a method of manufacturing integrated circuit devices comprising: supporting a semiconductor wafer in a substantially horizontal orientation; providing a transducer assembly comprising a probe having a forward portion, a rear portion and no more than one piezoelectric transducer element coupled to the rear portion; supporting the transducer assembly so that the forward portion is adjacent but spaced from a first surface of the semiconductor wafer; rotating the semiconductor wafer; applying a fluid to the first surface of the semiconductor wafer to form a film of the fluid between a portion of the forward portion and the first surface of the semiconductor wafer; and transmitting acoustical energy generated by the piezoelectric transducer element into the film of the fluid via the forward portion, the acoustical energy loosening particles from the first surface of the semiconductor wafer.

主权项

1. A method of manufacturing integrated circuit devices comprising:
supporting a semiconductor wafer in a substantially horizontal orientation; providing a transducer assembly comprising a probe having a forward portion, and a rear portion and no more than one piezoelectric transducer element coupled to the rear portion of the probe; supporting the transducer assembly so that the forward portion of the probe is adjacent to but spaced from a first surface of the semiconductor wafer; rotating the semiconductor wafer; applying a fluid to the first surface of the semiconductor wafer so as to form a film of the fluid between at least a portion of the forward portion and the first surface of the semiconductor wafer; and transmitting acoustical energy that is generated by the no more than one piezoelectric transducer element into the film of the fluid via the forward portion, the acoustical energy loosening particles from the first surface of the semiconductor wafer.