| 摘要 |
A composition and method for removing residues such as, without limitation, post etched and/or post ashed photoresist, plasma etching, ashing, and mixtures thereof from a substrate is described herein. In one aspect, there is provided a method for removing residues from a substrate comprising: contacting the substrate with a composition comprising: water; a quaternary ammonium hydroxide compound; a fluoride containing compound; and optionally a corrosion inhibitor wherein the composition is free of an added organic solvent and wherein the composition has a pH greater than 9. |
| 主权项 |
1. A composition for removing residues from a substrate, the composition consisting of:
water; a quaternary ammonium hydroxide compound comprising a compound having a general formula [N-R1R2R3R4]+OH−wherein R1, R2, R3, and R4 are each independently an alkyl group, a hydroxyalkyl group, and mixtures thereof; a fluoride containing compound comprising at least one selected from the group consisting of a compound having a general formula R5R6R7R8NF where R5, R6, R7 and R8 are each independently hydrogen, an alcohol group, an alkoxy group, an alkyl group, and mixtures thereof; hydrofluoric acid; choline fluoride; aluminum hexafluoride; fluoride salt of an amine; and mixtures thereof; optionally a corrosion inhibitor selected from the group consisting of an organic acid, an organic acid salt, catechol, resorcinol, a phenol, maleic anhydride, phthalic anhydride, pyrogallol, gallic acid or esters thereof, benzotriazole, carboxybenzotriazole, diethylhydroxlamine, fructose, ammonium thiosulfate, glycine, tetramethylguanidine, iminodiacetic acid, thioglycerol, triazole, dimethylacetamide, mercapto-group containing compound and combinations thereof; and optionally an additive selected from the group consisting of a surfactant, a chelating agent, a dye, a biocide, and combinations thereof, wherein the composition is free of an added organic solvent and wherein the composition has a pH greater than 9. |
