Filling cavities in semiconductor structures having adhesion promoting layer in the cavities

摘要

High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close off the trench at the top during filling may be reduced in some embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.

主权项

1. A method comprising:
lining a cavity with a lining material; depositing a metal nucleation layer on the lining material; removing the lining material and metal nucleation layer from a portion of a sidewall of the cavity; and after removing the lining material and metal nucleation layer from the portion of the sidewall of the cavity, depositing a metallic material in the cavity covering the lining material, metal nucleation layer, and the portion of the sidewall, the metallic material adjacent to the lining material and substantially filling the cavity.