Programmable metallization memory cell with layered solid electrolyte structure

摘要

Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

主权项

1. A method of forming a programmable metallization memory cell comprising:
forming a first electrode; forming a variable resistive element by depositing a plurality of alternating solid electrolyte layers and electrically conductive layers comprising an electrochemically inert metal on the first electrode; and depositing a second electrode on the variable resistive element, the electrically conductive layers electrically couple the first electrode to the second electrode.