发明名称 |
Optical lithography using graphene contrast enhancement layer |
摘要 |
Technologies are generally described for methods, systems, and structures that include patterns formed by optical lithography. In some example methods, a photoresist layer is applied to a substrate, and a grapheme layer can be applied to the photoresist layer. Light can be applied through a mask to the graphene layer, where the mask includes a pattern. The light can form the pattern on the graphene layer such that the pattern forms on the photoresist layer. |
申请公布号 |
US8773636(B2) |
申请公布日期 |
2014.07.08 |
申请号 |
US201313950923 |
申请日期 |
2013.07.25 |
申请人 |
Empire Technology Development, LLC |
发明人 |
Yager Thomas A.;Miller Seth Adrian |
分类号 |
G03F7/20;G03F7/38;G03B27/52 |
主分类号 |
G03F7/20 |
代理机构 |
Moritt Hock & Hamroff LLP |
代理人 |
Moritt Hock & Hamroff LLP ;Rubin, Esq. Steven S. |
主权项 |
1. A system effective to form a structure, the system comprising:
a processor; a light source arranged in communication with the processor; a mask, wherein the mask includes a pattern; a substrate; a photoresist layer on the substrate; and a graphene layer on the photoresist layer; wherein the processor is configured effective to:
apply light through the mask to the graphene layer, wherein the light is effective to form the pattern on the photoresist layer though the graphene layer; andremove the graphene layer from the photoresist layer with use of a dry etching technique. |
地址 |
Wilmington DE US |