发明名称 Optical lithography using graphene contrast enhancement layer
摘要 Technologies are generally described for methods, systems, and structures that include patterns formed by optical lithography. In some example methods, a photoresist layer is applied to a substrate, and a grapheme layer can be applied to the photoresist layer. Light can be applied through a mask to the graphene layer, where the mask includes a pattern. The light can form the pattern on the graphene layer such that the pattern forms on the photoresist layer.
申请公布号 US8773636(B2) 申请公布日期 2014.07.08
申请号 US201313950923 申请日期 2013.07.25
申请人 Empire Technology Development, LLC 发明人 Yager Thomas A.;Miller Seth Adrian
分类号 G03F7/20;G03F7/38;G03B27/52 主分类号 G03F7/20
代理机构 Moritt Hock & Hamroff LLP 代理人 Moritt Hock & Hamroff LLP ;Rubin, Esq. Steven S.
主权项 1. A system effective to form a structure, the system comprising: a processor; a light source arranged in communication with the processor; a mask, wherein the mask includes a pattern; a substrate; a photoresist layer on the substrate; and a graphene layer on the photoresist layer; wherein the processor is configured effective to: apply light through the mask to the graphene layer, wherein the light is effective to form the pattern on the photoresist layer though the graphene layer; andremove the graphene layer from the photoresist layer with use of a dry etching technique.
地址 Wilmington DE US