| 发明名称 | Ge-on-insulator structure and method for forming the same | ||
| 摘要 | A method for forming a Ge-on-insulator structure is provided, comprising steps of: forming a Ge layer (1200) on a substrate (2000); treating a first surface of the Ge layer (1200) to form a first semiconducting metal-germanide passivation layer (1300); bonding the first semiconducting metal-germanide passivation layer (1300) with a silicon substrate (1100), wherein on a surface of the silicon substrate (1100) an oxide insulating layer is formed; and removing the substrate (2000). Further, a Ge-on-insulator structure formed by the method is also provided. | ||
| 申请公布号 | US8772873(B2) | 申请公布日期 | 2014.07.08 |
| 申请号 | US201113201903 | 申请日期 | 2011.07.27 |
| 申请人 | Tsinghua University | 发明人 | Wang Jing;Xu Jun;Guo Lei |
| 分类号 | H01L27/12;H01L21/336;H01L29/786;H01L21/28;H01L21/762;H01L29/66 | 主分类号 | H01L27/12 |
| 代理机构 | Hodgson Russ LLP | 代理人 | Hodgson Russ LLP |
| 主权项 | 1. A method for forming a Ge-on-insulator structure, comprising steps of: forming a Ge layer on a substrate; treating a first surface of the Ge layer to form a first semiconducting metal-germanide passivation layer; bonding the first semiconducting metal-germanide passivation layer with a silicon substrate, wherein on a surface of the silicon substrate an oxide insulating layer is formed; and removing the substrate. | ||
| 地址 | Beijing CN | ||