| 主权项 |
1. A nonvolatile memory device, comprising:
a device isolation pattern formed in a substrate, the device isolation pattern defining a plurality of first active regions and a second active region, wherein the plurality of first active regions extend in parallel to each other along a first direction, and wherein the second active region extends along a second direction perpendicular to the first direction and crosses the plurality of the first active regions, wherein the second active region is commonly connected to the plurality of the first active regions; a common source formed in the second active region and extends along the second direction; a plurality of common drains formed in the plurality of the first active regions, respectively; a first selection line, a plurality of word lines, and a second selection line, each of the first selection line, the plurality of word lines, and the second selection line crossing the first active regions, each of the first selection line, the plurality of word lines, and the second selection line disposed between the common source and the common drains, and each of the first selection line, the plurality of word lines, and the second selection line in parallel to each other, wherein the common source has different conductive type than a channel region of one of the first selection line and the second selection line; and a source conductive line disposed on the second active region, the source conductive line extending along the second direction and being electrically connected to the common source. |
