Semiconductor memory device

摘要

A semiconductor memory device includes a semiconductor film; a first gate insulating film covering the semiconductor film; a first gate electrode provided over the semiconductor film with the first gate insulating film interposed therebetween; a first conductive film which is provided over the first gate insulating film; an insulating film which is provided over the first gate insulating film, exposes top surfaces of the first gate electrode and the first conductive film, and has a groove portion between the first gate electrode and the first conductive film; an oxide semiconductor film which is provided over the insulating film and is in contact with the first gate electrode, the first conductive film, and the groove portion; a second gate insulating film covering the oxide semiconductor film; and a second gate electrode provided over the oxide semiconductor film and the groove portion with the second gate insulating film interposed therebetween.

主权项

1. A semiconductor memory device comprising:
a semiconductor layer; a first gate insulating layer over the semiconductor layer; an insulating layer over the first gate insulating layer; a first gate electrode over the semiconductor layer with the first gate insulating layer interposed therebetween, wherein the first gate electrode is provided in the insulating layer; a conductive layer provided in the insulating layer; an oxide semiconductor layer in contact with the first gate electrode, the conductive layer, and side surfaces of a groove portion in the insulating layer; a second gate insulating layer covering the oxide semiconductor layer; and a second gate electrode provided over the oxide semiconductor layer with the second gate insulating layer interposed therebetween.