| 发明名称 | Lateral high electron mobility transistor with Schottky junction | ||
| 摘要 | A lateral HEMT includes a first semiconductor layer on a second semiconductor layer, a heterojunction at an interface between the first semiconductor layer and the second semiconductor layer, and a rectifying Schottky junction. The rectifying Schottky junction has a first terminal electrically coupled to a source electrode and a second terminal electrically coupled to the second semiconductor layer. | ||
| 申请公布号 | US8772835(B2) | 申请公布日期 | 2014.07.08 |
| 申请号 | US201313911437 | 申请日期 | 2013.06.06 |
| 申请人 | Infineon Technologies Austria AG | 发明人 | Zundel Markus;Hirler Franz |
| 分类号 | H01L29/778 | 主分类号 | H01L29/778 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A lateral HEMT, comprising: a first semiconductor layer on a second semiconductor layer; a heterojunction at an interface between the first semiconductor layer and the second semiconductor layer; and a rectifying Schottky junction having a first terminal electrically coupled to a source electrode and a second terminal electrically coupled to the second semiconductor layer. | ||
| 地址 | Villach AT | ||