Semiconductor processing method and semiconductor structure

摘要

A semiconductor processing method that can generate a hole with different diameters, comprising: providing first material and second material different from the first material; and utilizing a etching process to etch the first material and the second material to form a hole through the first material and the second material; wherein the etching process has different etching rates for the first material and the second material such that the hole have different diameters. A semiconductor structure corresponding to the above-mentioned method is also disclosed.

主权项

1. A semiconductor processing method that can generate a single hole with different diameters, comprising:
providing first material and second material different from the first material; and utilizing a single etching process to etch the first material and the second material to form a single hole through the first material and the second material; wherein the single etching process has different etching rates for the first material and the second material such that the single hole have different diameters; where the single hole includes a second portion, and a third portion under the second portion; wherein the third portion has a diameter smaller than the second portion; where the second portion touches both the first material and the second material, and the third portion only touches the second material.