Annealing copper interconnects

摘要

A method for modifying the chemistry or microstructure of silicon-based technology via an annealing process is provided. The method includes depositing a reactive material layer within a selected proximity to an interconnect, igniting the reactive material layer, and annealing the interconnect via heat transferred from the ignited reactive material layer. The method can also be implemented in connection with a silicide/silicon interface as well as a zone of silicon-based technology.

主权项

1. A method for annealing an interconnect, comprising:
depositing a reactive material layer within a selected proximity to an interconnect, wherein the interconnect is copper or copper-based; igniting the reactive material layer; and annealing the interconnect via heat transferred from the ignited reactive material layer.