Method of fabricating electrical contact

摘要

A method of fabricating an electrical contact comprises the following steps. A substrate having at least a silicon region is provided. At least an insulation layer is formed on the substrate, wherein the insulation layer comprises at least a contact hole which exposes the silicon region. A metal layer is formed on sidewalls and bottom of the contact hole. An annealing process is performed to form a first metal silicide layer in the silicon region nearby the bottom of the contact hole. A conductive layer covering the metal layer and filling up the contact hole is then formed, wherein the first metal silicide layer is transformed into a second metal silicide layer when the conductive layer is formed.

主权项

1. A method of fabricating an electrical contact, comprising:
providing a substrate having at least a silicon region; forming at least an insulation layer on the substrate, wherein the insulation layer comprises at least a contact hole exposing the silicon region and having sidewalls and a bottom surface; forming a metal layer on the sidewalls and the bottom of the contact hole; performing an annealing process to form a first metal silicide layer in the silicon region nearby the bottom of the contact hole; and forming a conductive layer covering the metal layer and filling up the contact hole, wherein the first metal silicide layer is transformed into a second metal silicide layer when forming the conductive layer, wherein a temperature of the annealing process is lower than a temperature applied in a step for forming the conductive layer.