Manufacturing method of SOI substrate and manufacturing method of semiconductor device

摘要

A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.

主权项

1. A manufacturing method of an SOI substrate, the manufacturing method comprising:
forming a first insulating layer over a semiconductor substrate; forming a second insulating layer over the first insulating layer; forming an ion introduction layer in the semiconductor substrate by applying an ion beam to the semiconductor substrate through the first insulating layer and the second insulating layer; forming a bonding layer over the second insulating layer by a CVD method; bonding the semiconductor substrate to a base substrate with the first insulating layer, the second insulating layer and the bonding layer interposed therebetween; separating a part of the semiconductor substrate at the ion introduction layer, leaving a semiconductor layer over the base substrate; irradiating the semiconductor layer with laser light after the separation step; and thinning the semiconductor layer by etching the semiconductor layer.