Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same

摘要

The semiconductor device comprises a device isolation region formed in a semiconductor substrate, a lower electrode formed in a device region defined by the device isolation region and formed of an impurity diffused layer, a dielectric film of a thermal oxide film formed on the lower electrode, an upper electrode formed on the dielectric film, an insulation layer formed on the semiconductor substrate, covering the upper electrode, a first conductor plug buried in a first contact hole formed down to the lower electrode, and a second conductor plug buried in a second contact hole formed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrode is not formed in the device isolation region, whereby the short-circuit between the upper electrode and the lower electrode in the cavity can be prevented.

主权项

1. A fabricating method of a semiconductor device comprising:
forming a device isolation region in a semiconductor substrate which includes a first device region and a second device region, the device isolation region surrounding the first device region and the second device region; implanting an impurity into the semiconductor substrate of the second device region other than the first device region to form an impurity diffused layer in the second device region; forming a gate insulation film on a surface of the first device region, and a dielectric film thicker than the gate insulation film on a surface of the impurity diffused layer, by thermal oxidation; and forming a gate electrode over the gate insulation film and the device isolation region, and an electrode over the dielectric film, an edge of the electrode being located above the impurity diffused layer.