Method of use of a field-effect transistor, single-electron transistor and sensor

摘要

A method of detecting a detection target using a sensor requires a sensor having a transistor selected from the group of field-effect transistors or single electron transistors. The transistor includes a substrate, a source electrode disposed on the substrate and a drain electrode disposed on the substrate, and a channel forming a current path between the source electrode and the drawing electrode; an interaction-sensing gate comprising a specific substance; and a voltage gate. The method includes (a) providing the detection target on the interaction-sensing gate; (b) setting the gate voltage in the voltage gate at a predetermined level; (c) selectively interacting the specific substance with the detection target; (d) when the detection target interacts with the specific substance, changing a gate voltage in the voltage gate to adjust a characteristic of the transistor; and (e) measuring a change in the characteristic of the transistor to determine a presence of the detection target.

主权项

1. A method of detecting a detection target using a sensor,
the sensor comprising a transistor selected from the group of field-effect transistors or single electron transistors, the transistor comprising
a substrate having a first side and a second side, the second side being opposed to the first side, the substrate being formed of an insulating material,a source electrode disposed on the first side of the substrate and a drain electrode disposed on the first side of the substrate, anda channel forming a current path between the source electrode and the drain electrode;an interaction-sensing gate disposed on the second side of the entire substrate, the interaction-sensing gate immobilizing a specific substance that is capable of selectively interacting with the detection target, the interaction-sensing gate being formed of a conductor; anda gate disposed on the side of the channel on the first side of the substrate; the method comprising the steps of:
(a) providing the detection target on the interaction-sensing gate;(b) setting a gate voltage in the gate in such a state that a transconductance of the transistor reaches a highest level;(c) selectively interacting the specific substance with the detection target;(d) when the detection target interacts with the specific substance, changing an electric potential of the interaction-sensing gate which leads to a change in a characteristic value of the transistor; and(e) measuring the change in the characteristic value of the transistor to determine a presence of the detection target.