发明名称 Semiconductor device with a copper line and method for manufacturing the same
摘要 A semiconductor device with a copper line comprises a lower portion of a copper pattern buried in an interlayer insulating film, an upper portion of the copper disposed over the upper portion of the lower copper pattern, and an upper barrier metal layer disposed over upper and side surfaces of the upper copper pattern. As a result, the copper pattern is protected by the barrier metal layers, providing a metal line with a stable structure.
申请公布号 US8772936(B2) 申请公布日期 2014.07.08
申请号 US201213607631 申请日期 2012.09.07
申请人 SK Hynix Inc. 发明人 Park Hyung Jin
分类号 H01L23/52;H01L23/48;H01L21/4763;H01L21/44;H01L21/768 主分类号 H01L23/52
代理机构 代理人
主权项 1. A semiconductor device, comprising: A copper pattern disposed over a substrate, the copper pattern including a lower copper pattern portion disposed below an upper surface of an interlayer insulating film, and an upper copper pattern portion disposed over the lower copper pattern portion and above the upper surface of the interlayer insulating film; a lower barrier metal layer disposed over the side surface and a lower surface of the copper pattern; an upper barrier metal layer disposed over the lower barrier metal layer of the side surface of the upper copper pattern and an upper surface of the copper pattern; and a mask layer disposed over the upper barrier metal layer.
地址 Icheon KR