发明名称 |
Apparatus and method of detecting electromagnetic radiation |
摘要 |
A high speed and miniature detection system, especially for electromagnetic radiation in the GHz and THz range comprises a semiconductor structure having a 2D charge carrier layer or a quasi 2D charge carrier layer with incorporated single or multiple defects, at least first and second contacts to the charge carrier layer, and a device for measuring photovoltage between the first and second contacts. System operation in various embodiments relies on resonant excitation of plasma waves in the semiconductor structure. |
申请公布号 |
US8772890(B2) |
申请公布日期 |
2014.07.08 |
申请号 |
US200812247096 |
申请日期 |
2008.10.07 |
申请人 |
Terasense Group, Inc. |
发明人 |
Kukushkin Igor;Muravev Viacheslav |
分类号 |
H01L27/14 |
主分类号 |
H01L27/14 |
代理机构 |
Seppo Laine Oy |
代理人 |
Seppo Laine Oy ;Wert Joshua P. |
主权项 |
1. A solid state detector apparatus comprising:
a semiconductor structure having a charge carrier layer, wherein charge carriers move in two dimensions (2D); at least one defect; and at least a first and a second contact defining a length of said charge carrier layer, said contacts being spaced apart by a distance, wherein the at least one defect and at least one of the first and second contacts define at least two length of regions which can act as resonant plasmon cavities. |
地址 |
Torrance CA US |