Oxide deposition by using a double liner approach for reducing pattern density dependence in sophisticated semiconductor devices

摘要

A silicon dioxide material may be provided in sophisticated semiconductor devices in the form of a double liner including an undoped silicon dioxide material in combination with a high density plasma silicon dioxide, thereby providing reduced dependency on pattern density. In some illustrative embodiments, the silicon dioxide double liner may be used as a spacer material and as a hard mask material in process strategies for incorporating a strain-inducing semiconductor material.

主权项

1. A method of forming a silicon dioxide cover layer on a semiconductor device, the method comprising:
depositing an undoped silicon dioxide layer in a process ambient by performing a chemical vapor deposition process above a plurality of circuit features formed above a substrate, wherein said undoped silicon dioxide layer comprises substantially horizontal portions covering at least substantially horizontal surfaces of said plurality of circuit features and substantially vertical portions covering substantially vertical surfaces of said plurality of circuit features; and depositing a hydrogen-containing silicon dioxide layer on said substantially horizontal and vertical portions of said undoped silicon dioxide layer by performing a high density plasma chemical vapor deposition process, wherein depositing said hydrogen-containing silicon dioxide layer comprises adjusting said process ambient by adding an additional hydrogen source to said process ambient such that hydrogen from said additional hydrogen source is introduced into said hydrogen-containing silicon dioxide layer during said deposition thereof.