Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same

摘要

A group III nitride crystal substrate is provided in which a uniform distortion at a surface layer of the crystal substrate represented by a value of |d1 −d2 |/d2 obtained from a plane spacing d1 at the X-ray penetration depth of 0.3 μm and a plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 1.9 ×10−3, and the main surface has a plane orientation inclined in the <10-10> direction at an angle equal to or greater than 10° and equal to or smaller than 80° with respect to one of (0001) and (000-1) planes of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

主权项

1. A group III nitride crystal substrate, wherein,
a plane spacing of arbitrary specific parallel crystal lattice planes of said crystal substrate being obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a main surface of said crystal substrate while X-ray diffraction conditions of said specific parallel crystal lattice planes of said crystal substrate are satisfied, a uniform distortion at a surface layer of said crystal substrate represented by a value of |d1−d2|/d2 obtained from a plane spacing d1 at said X-ray penetration depth of 0.3 μm and a plane spacing d2 at said X-ray penetration depth of 5 μm is equal to or lower than 1.9×10−3, and said main surface has a plane orientation inclined in a <10-10> direction at an angle equal to or greater than 10° and equal to or smaller than 80° with respect to one of (0001) and (000-1) planes of said crystal substrate.