| 摘要 |
<p>A decoupling capacitor formed from a fin field-effect transistor (FinFET) and a method using the same are provided. An embodiment of the decoupling capacitor includes a fin field-effect transistor (FinFET) having a semiconductor substrate supporting a gate stack, a source, and a drain, a first terminal coupled to the semiconductor substrate and to the gate stack, the first terminal configured to couple with a first power rail, and a second terminal coupled to the source and to the drain, the second terminal configured to couple with a second power rail having a higher potential than the first power rail.</p> |
