发明名称 Semiconductor device including inner interconnection structure able to conduct signals or voltages in the semiconductor chip with vertical connection vias and horizontal buried conductive lines
摘要 A semiconductor device includes a semiconductor chip and an inner interconnection structure. The semiconductor chip includes a front surface that exposes first connection terminals and a rear surface that is opposite to the front surface and exposes second connection terminals separated from the first connection terminals. The inner interconnection structure includes horizontal buried conductive lines and vertical connection lines disposed to pierce the semiconductor chip to connect the first connection terminals and the second connection terminals.
申请公布号 US8772937(B2) 申请公布日期 2014.07.08
申请号 US201113162775 申请日期 2011.06.17
申请人 SK Hynix Inc. 发明人 Seo Hyun Chul;Lee Seung Yeop
分类号 H01L23/48 主分类号 H01L23/48
代理机构 William Park & Associates Patent Ltd. 代理人 William Park & Associates Patent Ltd.
主权项 1. A semiconductor device comprising: a semiconductor chip comprising a front surface with circuit elements and interconnections integrated thereon and a rear surface opposite to the front surface; first buried conductive lines vertically separated from the front surface of the semiconductor chip; a first conductive via connected to the first buried conductive line by piercing from the front surface of the semiconductor chip; a second conductive via connected to the first buried conductive line through the semiconductor chip from the rear surface; and a dielectric via disposed to electrically separate one of the buried conductive lines to a plurality of conductive line portions.
地址 Gyeonggi-do KR