Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material

摘要

A silicon/germanium material and a silicon/carbon material may be provided in transistors of different conductivity type on the basis of an appropriate manufacturing regime without unduly contributing to overall process complexity. Furthermore, appropriate implantation species may be provided through exposed surface areas of the cavities prior to forming the corresponding strained semiconductor alloy, thereby additionally contributing to enhanced overall transistor performance. In other embodiments a silicon/carbon material may be formed in a P-channel transistor and an N-channel transistor, while the corresponding tensile strain component may be overcompensated for by means of a stress memorization technique in the P-channel transistor. Thus, the advantageous effects of the carbon species, such as enhancing overall dopant profile of P-channel transistors, may be combined with an efficient strain component while enhanced overall process uniformity may also be accomplished.

主权项

1. A method, comprising:
forming a plurality of first cavities adjacent to a first gate electrode structure of a first transistor and a plurality of second cavities adjacent to a second gate electrode structure of a second transistor, said first and second transistors being of different conductivity type; forming a semiconductor material in said pluralities of first and second cavities, said semiconductor material having a first type of strain; creating lattice damage in said semiconductor material selectively in said first transistor to form a substantially relaxed semiconductor material in said plurality of first cavities of said first transistor; forming a substantially continuous strain-inducing material layer above said first transistor, said substantially continuous strain-inducing material layer continuously covering substantially all exposed surfaces of said first transistor; and annealing said substantially relaxed semiconductor material in the presence of said substantially continuous strain-inducing material layer to re-crystallize said substantially relaxed semiconductor material in said plurality of first cavities of said first transistor into a strained state, said strained state corresponding to a second type of strain that is opposite to said first type of strain.