Transistor employing vertically stacked self-aligned carbon nanotubes

摘要

A fin structure including a vertical alternating stack of a first isoelectric point material layer having a first isoelectric point and a second isoelectric material layer having a second isoelectric point less than the first isoelectric point is formed. The first and second isoelectric point material layers become oppositely charged in a solution with a pH between the first and second isoelectric points. Negative electrical charges are imparted onto carbon nanotubes by an anionic surfactant to the solution. The electrostatic attraction causes the carbon nanotubes to be selectively attached to the surfaces of the first isoelectric point material layer. Carbon nanotubes are attached to the first isoelectric point material layer in self-alignment along horizontal lengthwise directions of the fin structure. A transistor can be formed, which employs a plurality of vertically aligned horizontal carbon nanotubes as the channel.

主权项

1. A structure comprising:
a fin structure located on a substrate, having a length in a lengthwise direction and a width in a widthwise direction, and comprising at least one pair of layers, wherein each pair of layers within said at least one pair of layers includes a first isoelectric point material layer having a first isoelectric point and a second isoelectric point material layer having a second isoelectric point that is different from said first isoelectric point; carbon nanotubes located on lengthwise sidewalls of said at least one first isoelectric point material layer, wherein at least one second isoelectric point material layer is not in contact with a surface of any carbon nanotube; a gate dielectric contacting a portion of lengthwise sidewalls of said fin structure; and a gate conductor overlying said gate dielectric.