| 摘要 |
<p>A composition is provided that is effective for removing post etch treatment (PET) polymeric films and photoresist from semiconductor substrates. The composition exhibits excellent polymer film removal capability while maintaining compatibility with copper and low-κdielectrics and contains water, ethylene glycol, a glycol ether solvent, morpholinopropylamine and a corrosion inhibiting compound and optionally one or more metal ion chelating agent, one or more other polar organic solvent, one or more tertiary amine, one or more aluminum corrosion inhibition agent, and one or more surfactant.</p> |
