| 摘要 |
A method of manufacturing a semiconductor device according to the present invention is as follows: a light emitting structure is grown on a substrate for growth, a carrier substrate is bonded on the substrate for growth, and, the substrate for growth is removed from the light emitting structure. In removing the substrate for growth, a first chemical lift-off (CLO) process is performed at a first etching temperature during a first interval to remove the substrate for growth, and remaining spots are removed by performing a second CLO process at a second etching temperature during a second interval. The second etching temperature is higher than the first etching temperature by at least 20°C. |
