发明名称 |
METHODS FOR FORMING FINFETS WITH SELF-ALIGNED SOURCE/DRAIN |
摘要 |
<p>A method includes forming a gate stack to cover a middle portion of a semiconductor fin, and doping an exposed portion of the semiconductor fin with an n-type impurity to form an n-type doped region. At least a portion of the middle portion is protected by the gate stack from receiving the n-type impurity. The method further includes etching the n-type doped region using chlorine radicals to form a recess, and performing an epitaxy to re-grow a semiconductor region in the recess.</p> |
申请公布号 |
KR20140085275(A) |
申请公布日期 |
2014.07.07 |
申请号 |
KR20130031949 |
申请日期 |
2013.03.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
XU JEFF J.;FANG ZIWEI;ZHANG YING |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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