OXIDE SINTERED BODY, OXIDE SINTERED BODY SPUTTERING TARGET AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a high quality and high yield IGZO sputtering target suitable for an oxide semiconductor film use by improving variation of property of an IGZO thin film and improving generation of cracks during target manufacturing and sputtering which are problems especially for large scale sputtering target for oxide semiconductor film.SOLUTION: There is provided an oxide sintered body containing at least In, Ga and Zn, having a homologous crystal structure represented by InGaZnOand a diffraction intensity ratio I1/I2 of 0.85 to 1.25, where I1 is a diffraction intensity at 30.3° to 30.9° of an incident angle in X-ray diffraction (2&thetas;) and I2 is diffraction intensity at 31.1° to 31.5°.