| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows reducing a forward voltage and a reverse leakage current, and easily performing rectification operation.SOLUTION: A semiconductor device 1 includes: an n-type substrate 2; an epitaxial layer 4; trenches 13 selectively formed on a surface portion of the epitaxial layer 4 and partitioning predetermined-shaped unit cells 14 in the surface portion; p-type layers 17 formed so as to follow internal surfaces of the trenches 13; n-type surface layers 9 formed so as to be exposed from a surface 10 of the epitaxial layer 4 in the unit cells 14; an n-type drift layer 8 formed between the n-type surface layers 9 and the n-type substrate 2; an anode electrode 31 forming ohmic junction with the n-type surface layers 9; and a cathode electrode 6 forming ohmic junction with the n-type substrate 2. |
