| 摘要 |
PROBLEM TO BE SOLVED: To provide a trench Schottky barrier diode capable of significantly improving trade-off of a forward drop voltage VF and a backward leak current IR while securing voltage bearing VBR.SOLUTION: A trench Schottky barrier diode 100 is characterized in that, when a width Wm of a mesa region is 1.5 μm or less and a forward current flows with a current density of 200A/cmin an active region, "a capacitor C formed from a conductor layer 120, a dielectric layer 118 and a mesa region 124" is charged with the sufficient amount of electric charge, such that a total carrier quantity Qacc being present in the mesa region 124 and a carrier quantity Qdop caused by an impurity in the mesa region 124 satisfy a predetermined relational expression, as a result. |
