METHOD FOR LIFTING SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for lifting a silicon single crystal that may regulate a resistibility along a lifting direction of the single crystal within an aimed range and that gives the single crystal of the desired resistibility in high yield for producing an n-type silicon single crystal doped with P by a Czochralski process.SOLUTION: While lifting a silicon single crystal 7 with an Al or In wire 9 inserted in a tubular heat-resistance and heat-insulating protection tube 8 hanged down above a raw material silicon melt 4 doped with P in a crucible 2, Al or In is added to the silicon melt 4 by melting and dropping a part of the wire 9 exposed from the lower end of the protection tube 8.