发明名称 SEMICONDUCTOR DEVICE USING CONDUCTIVE BONDING MATERIAL AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device in which occurrence of conductive residue, due to protrusion of paste, is suppressed.SOLUTION: A semiconductor device has a semiconductor element 101 and an insulating substrate. A wiring layer 102 is formed on the insulating substrate, and a bond layer 105 composed of a sintered metal is formed between the semiconductor element and wiring layer. The bond layer has a first sintered layer 105a arranged on the side close to the semiconductor element, and sintered layers 105b, 105c arranged on the side close to the wiring layer. The sintered layers close to the wiring layer are formed wider than the first sintered layer.
申请公布号 JP2014127537(A) 申请公布日期 2014.07.07
申请号 JP20120281947 申请日期 2012.12.26
申请人 HITACHI POWER SEMICONDUCTOR DEVICE LTD 发明人 MORITA TOSHIAKI;YASUDA YUSUKE;TOKOO NAOYA
分类号 H01L21/52;B22F3/22;B22F7/04;C22C1/04 主分类号 H01L21/52
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