| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including an insulation layer which sufficiently secures the insulation quality and achieves excellent heat radiation performance, and to provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device includes: a base substrate 22 formed by a material including aluminium; and a semiconductor element and a wiring layer which are disposed overlapping each other on one surface of the base substrate. The one surface of the base substrate is covered by an insulative alumite layer 23 formed by performing alumite processing with aluminium. A number of pores 27, each of which has an inner wall surface entirely covered by alumite, are formed on the alumite layer. A heat conductive material 28 fills the pores. |
