| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for obtaining a bonding interface of no defect having high bonding energy when compared with prior art, by performing direct bonding of two silicon-based surfaces under room temperature.SOLUTION: A bonding method of two silicon-based surfaces includes a step for subjecting at least one surface to surface activation by oxygen plasma, where the dilution volume percentage of chlorine in oxygen of the plasma is 0.25-10%, preferably 1-3%, and a step for bringing the surface thus processed into contact. |
