| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a modifying method of silicon oxide using a plasma capable of perpetually modifying (spatially reacting) a large volume of silicon oxide in the interior of a high-voltage space and a modifying apparatus for the same.SOLUTION: In a modifying apparatus of silicon oxide embodied by a plasma chemical reaction vessel for inducing a chemical reaction via a plasma in a state where a space between a pair of electrodes is being designated as a plasma generation region Z, a SiOexcited state is induced by streaming a fine silicon oxide powder into the plasma generation region Z between the electrodes, a CHexcited state is induced by streaming, into the plasma generation region Z between the electrodes, a reactive gas of methane or ethane or a mixture provided by mixing, with the reactive gas, a carrier gas consisting of an inert gas, a silicon derivative substance is obtained by accelerating the reaction of SiO+CH→Si(CH)(OH)within the plasma generation region Z.</p> |
